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Wetting layer
In experimental physics, a wetting layer is an initial layer of atoms that is epitaxially grown on a surface upon which self-assembled quantum dots or thin films are created. The atoms composing a wetting layer can be semimetallic elements/compounds (usually InAs in the case of self-assembled quantum dots) or metallic alloys (for thin films). This article refers to the wetting layer used for quantum dot applications. By spraying a surface with layers of these atoms under high temperature, this wetting layer residue is produced on the surface. Wetting layers control the artificial atomic states of the quantum dot for uses in quantum information processing and quantum computation.
==Process==
The wetting layer is epitaxially grown onto a surface using a molecular beam epitaxy (MBE) chamber at high temperatures. The temperatures required for wetting layer growth usually range from 400-500 degrees Celsius. If a self-assembled quantum dot is to form, an initial layer of atoms must first be placed on a surface. Due to the high elastic potential energy once a certain critical thickness is achieved, additional atoms group together to form the quantum dot to reduce this elastic energy. If further annealing of the quantum dot/wetting layer system is necessary, higher temperatures of up to 1100 degrees may be used.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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